craighopkins on 30 July 2015
http://www.cnet.com/news/intel-and-micron-debut-3d-xpoint-storage-technology-thats-1000-times-faster-than-existing-drives/
terms of technology, 3D XPoint memory includes the following characteristics:
- Cross-point array structure: Perpendicular conductors connect 128 billion densely packed memory cells. Each memory cell stores a single bit of data. This compact structure results in high performance as well as high-density bits.
- Stackable: In addition to its tight cross-point array structure, memory cells are stacked in multiple layers. The initial technology stores 128 gigabits per die across two memory layers. Future generations of this technology may increase the number of memory layers, in addition to traditional lithographic pitch scaling, thus further improving system capacities.
- Selector: Memory cells are accessed and written or read by varying the amount of voltage sent to each selector. This eliminates the need for transistors, increasing capacity while reducing cost.
- Fast-switching cell: With its small cell size, fast-switching selector, low-latency cross-point array and fast-write algorithm, the cell is able to switch states faster than any existing nonvolatile memory technology.
