New storage technology 1000x faster than modern storage (Intel and Micron)

[Teeqoz]

fatslob-:O said:

Teeqoz said:

I didn't say this was as big as the transistor, just that it was the first real breakthroug since the transistor

 

MRAM is more a counterpart to RAM, while this is more akin to NAND flash. It's application currently is for data centers and analytical applications, as a RAM/NAND hybrid, but it's application in consumer electronics is, I think, more like NAND, as storage, just much much faster.

I don't think MRAM is an alternative to DRAM when it shares the "non-volatile" property with NAND chips ...

Everspin Technologies was very much touting it as a DRAM/NAND hybrid much like how Intel and Micron is with their 3D XPoint and I don't think this is going to be in consumer electronics for either since you need a big motherboard like the ones they use in severs to get a meaningful storage size since it's data/cell density is a lot lower than NAND 

The first "real breakthrough" is pretty arbitrary as I could argue that EUV lithography is the bigger step since it allows us to continue exploring Moore's Law AND give transistor cost reduction ... 

Um, I'm pretty sure they said this had 10x the storage density of raditional NAND.

EDIT: and Moore's Law only has a few years left, because we are soon at the point where the "gate" in transistors are the size of an atom, and once we reach that point, there is literally nothing we can do about it. Traditional transistors are reaching their full potential very soon.