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czecherychestnut on 30 July 2015
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fatslob-:O said:
Teeqoz said:

I didn't say this was as big as the transistor, just that it was the first real breakthroug since the transistor

 

MRAM is more a counterpart to RAM, while this is more akin to NAND flash. It's application currently is for data centers and analytical applications, as a RAM/NAND hybrid, but it's application in consumer electronics is, I think, more like NAND, as storage, just much much faster.

I don't think MRAM is an alternative to DRAM when it shares the "non-volatile" property with NAND chips ...

Everspin Technologies was very much touting it as a DRAM/NAND hybrid much like how Intel and Micron is with their 3D XPoint and I don't think this is going to be in consumer electronics for either since you need a big motherboard like the ones they use in severs to get a meaningful storage size since it's data/cell density is a lot lower than NAND ...

The first "real breakthrough" is pretty arbitrary as I could argue that EUV lithography is the bigger step since it allows us to continue exploring Moore's Law AND give transistor cost reduction ..

What has hurt Everspin is not having access to the latest lithography tech, they only recently moved to 90nm for their latest 64Mb chips, meanwhile all the NAND manufacturers are sub 20nm now,  massive difference.