| Teeqoz said: I didn't say this was as big as the transistor, just that it was the first real breakthroug since the transistor
MRAM is more a counterpart to RAM, while this is more akin to NAND flash. It's application currently is for data centers and analytical applications, as a RAM/NAND hybrid, but it's application in consumer electronics is, I think, more like NAND, as storage, just much much faster. |
I don't think MRAM is an alternative to DRAM when it shares the "non-volatile" property with NAND chips ...
Everspin Technologies was very much touting it as a DRAM/NAND hybrid much like how Intel and Micron is with their 3D XPoint and I don't think this is going to be in consumer electronics for either since you need a big motherboard like the ones they use in severs to get a meaningful storage size since it's data/cell density is a lot lower than NAND ...
The first "real breakthrough" is pretty arbitrary as I could argue that EUV lithography is the bigger step since it allows us to continue exploring Moore's Law AND give transistor cost reduction ...
