HoloDust said:
I believe Fatslob-:O is more into matter, maybe he can chime in. |
In the Arstechnica article about this story, there's a brief mention of why they have gone with it:
http://arstechnica.co.uk/gadgets/2015/07/ibm-unveils-industrys-first-7nm-chip-moving-beyond-silicon/
"Technologically, SiGe (silicon-germanium) and EUV are both very significant. SiGe has higher electron mobility than pure silicon, which makes it better suited for smaller transistors. The gap between two silicon nuclei is about 0.5nm; as the gate width gets ever smaller (about 7nm in this case), the channel becomes so small that the handful of silicon atoms can't carry enough current. By mixing some germanium into the channel, electron mobility increases, and adequate current can flow. Silicon generally runs into problems at sub-10nm nodes, and we can expect Intel and TSMC to follow a similar path to IBM, GlobalFoundries, and Samsung (aka the Common Platform alliance)."
Please excuse my bad English.
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